BYV32E-100

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.

Features and Benefits
  • High reverse voltage surge capability
  • High thermal cycling performance
  • Low thermal resistance
  • Soft recovery characteristic minimizes power consuming oscillations
  • Very low on-state loss
Applications
  • Output rectifiers in high-frequency switched-mode power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYV32E-100 VRRM repetitive peak reverse voltage       100 V
IO(AV) average output current δ = 0.5  ; Tmb ≤ 115 °C; SQW; both diodes conducting     20 A
IFRM repetitive peak forward current δ = 0.5  ; tp = 25 µs; Tmb ≤ 115 °C; per diode     20 A
IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode     137 A
tp = 10 ms; Tj(init) = 25 °C; SIN; per diode     125 A
VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kμ; all pins     8 kV
VF forward voltage IF = 8 A; Tj = 150 °C   0.72 0.85 V
IF = 20 A; Tj = 25 °C   1 1.15 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery   20 25 ns
Datasheet
Chemical Content

Chemical Content - BYV32E-100

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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