BYV32E-200P

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package

Features and Benefits
  • Ultra low leakage current
  • High junction temperature up to 175 °C
  • Low on-state loss
  • Fast switching
  • Soft recovery characteristic minimizes power consuming oscillations
  • High reverse surge capability
  • High thermal cycling performance
  • Low thermal resistance
Applications
  • Home appliance power supply
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYV32E-200P VRRM repetitive peak reverse voltage       200 V
IF(AV) average forward current δ = 0.5  ; Tmb ≤ 149 °C; Square-ware pulse     10 A
IO(AV) average output current δ = 0.5  ; Tmb ≤ 149 °C; Square-ware pulse     20 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; SIN; per diode     125 A
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode     137 A
VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kμ; all pins     8 kV
VF forward voltage IF = 20 A; Tj = 25 °C   1.06 1.15 V
IF = 8 A; Tj = 150 °C   0.76 0.85 V
IF = 10 A; Tj = 25 °C   0.95   V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C   18 25 ns
Datasheet
Chemical Content

Chemical Content - BYV32E-200P

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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