BYV415J-600P

Dual ultrafast power diodes in a TO3PF plastic package.

Features and Benefits
• Very low on-state loss
• Reduces switching losses in associated MOSFET or IGBT
• Low leakage current
• Isolated plastic package
Applications
• Active PFC in air conditione
• S.M.P.S Power Factor Correction (PFC)
• Half-bridge/full-bridge switched-mode power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYV415J-600P VR reverse voltage DC     600 V
IF(AV) average forward current δ = 0.5 ; Th ≤ 100 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3     15 A
IFSM non-repetitive peak on-state current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; per diode; Fig. 4     150 A
non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; per diode     165 A
Tj junction temperature       175 °C
VF forward voltage IF = 15 A; Tj = 25 °C; Fig. 6   1.4 2.1 V
IF = 15 A; Tj = 150 °C; Fig. 6   1.1 1.4 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7   25 50 ns
Datasheet
Chemical Content

Chemical Content - BYV415J-600P

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