MCR08BT1
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Features and Benefits
- Sensitive gate
- Planar passivated for voltage ruggedness and reliability
- Direct triggering from low power drivers and logic ICs
- Surface mountable package
Applications
- General purpose switching and phase control
- Ignition circuits, CDI for 2- and 3-wheelers
- Motor control - e.g. small kitchen appliances
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
MCR08BT1 | VDRM | repetitive peak off-state voltage | 200 | V | |||
VRRM | repetitive peak reverse voltage | 200 | V | ||||
IT(AV) | average on-state current | half sine wave; Tsp ≤ 112 °C | 0.5 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Tsp ≤ 112 °C | 0.8 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 8 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 9 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 10 mA; Tj = 25 °C | 50 | 200 | µA | ||
IL | latching current | VD = 12 V; IG = 0.5 mA; Tj = 25 °C; RGK(ext) = 1 kμ | 2 | 6 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C; RGK(ext) = 1 kμ | 2 | 5 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 134 V; Tj = 125 °C; RGK = 1 kμ; (VDM = 67% of VDRM); exponential waveform | 500 | 800 | V/µs | ||
VDM = 134 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 25 | V/µs |