N0118GA

Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a SOT54 (TO-92) plastic package.

Features and Benefits
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
  • Ultra sensitive gate
Applications
  • Electronic ballasts
  • Safety shut down and protection circuits
  • Sensing circuits
  • Smoke detectors
  • Switched Mode Power Supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
N0118GA VDRM repetitive peak off-state voltage       600 V
VRRM repetitive peak reverse voltage       600 V
IT(AV) average on-state current half sine wave; Tlead ≤ 67 °C     0.51 A
IT(RMS) RMS on-state current half sine wave; Tlead ≤ 67 °C     0.8 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     8 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     9 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C 0.5   7 µA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C     6 mA
IH holding current VD = 12 V; Tj = 25 °C     5 mA
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 1 kμ; (VDM = 67% of VDRM); exponential waveform 75     V/µs
Datasheet
Chemical Content

Chemical Content - N0118GA

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.