PHD13003C

High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT54 (TO92) plastic package

Features and Benefits
  • Fast switching
  • High typical DC current gain
  • High voltage capability
  • Integrated anti-parallel E-C diode
  • Very low switching and conduction losses
Applications
  • Compact fluorescent lamps (CFL)
  • Low power electronic lighting ballasts
  • Off-line self-oscillating power supplies (SOPS) for battery charging
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
PHD13003C VCESM collector-emitter peak voltage VBE = 0 V     700 V
IC collector current DC     1.5 A
Ptot total power dissipation Tlead ≤ 25 °C     2.1 W
hFE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C 8 17 25  
IC = 1 A; VCE = 2 V; Tj = 25 °C 5 9 15  
tf fall time IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 μ; Tlead = 25 °C; resistive load     0.7 µs
IC = 0.5 A; IBon = 0.1 A; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load   0.1   µs
Datasheet
Chemical Content

Chemical Content - PHD13003C

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Disclaimer

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