TYN100W-1200T

Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intendedfor use in applications requiring very high inrush current capability and high thermal cycling performance.

Features and Benefits
  • High thermal cycling performance
  • Planar passivated for voltage ruggedness and reliability
  • High voltage capacity
  • Very high current surge capability
Applications
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control
  • Uninterruptible Power Supply (UPS)
  • Solid State Relay (SSR)
  • Traction battery charging
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
TYN100W-1200T VDRM  repetitive peak off-state voltage       1200 V
IT(RMS)  RMS on-state current  half sine wave; Tmb ≤ 131 °C     160 A
ITSM  non-repetitive peak on-state 
 current
 half sine wave; Tj(init) = 25 °C; tp = 10 ms     1150 A
 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     1265 A
Tj  junction temperature       150 °C
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; Tj = 25 °C     70 mA
IH  holding current  VD = 12 V; Tj = 25 °C     200 mA
VT  on-state voltage  IT = 50 A; Tj = 25 °C     1.37 V
dVD/dt  rate of rise of off-state voltage  VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM);  exponential waveform; RGK = 100 Ω 1000     V/µs
Datasheet

Chemical Content - TYN100W-1200T

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.