TYN16X-600CT
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high thermal cycling performance and high junction temperature capability (Tj(max)] = 150 °C).
Features and Benefits
- High junction operating temperature capability
- High thermal cycling performance
- High voltage capability
- Planar passivated for voltage ruggedness and reliability
Applications
- Ignition circuits
- Motor control
- Protection circuits e.g. SMPS inrush current
- Voltage regulation
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
TYN16X-600CT | VDRM | repetitive peak off-state voltage | 600 | V | |||
VRRM | repetitive peak reverse voltage | 600 | V | ||||
IT(AV) | average on-state current | half sine wave; Th ≤ 81 °C | 10.2 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Th ≤ 81 °C | 16 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 180 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 198 | A | |||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 15 | mA | |||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 60 | mA | |||
IH | holding current | VD = 12 V; Tj = 25 °C | 40 | mA | |||
dVD/dt | rate of rise of off-state voltage | VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 500 | V/µs |