TYN20-600TF

Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 package intended for use in applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C).

Features and Benefits
  •  High junction operating temperature capability (Tj(max) = 150 °C)
  •  High bidirectional blocking voltage capability
  •  Very high current surge capability
  •  High thermal cycling performance
  •  Planar passivated for voltage ruggedness and reliability
Applications
  • Capacitive Discharge Ignition (CDI)
  • Crowbar protection
  • Inrush protection
  • Motor control
  • Voltage regulation
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
TYN20-600TF VDRM  repetitive peak off-state voltage       600 V
VRRM  repetitive peak reverse voltage       600 V
IT(AV)  average on-state current  half sine wave; Tmb ≤ 136 °C     12.7 A
IT(RMS)  RMS on-state current  half sine wave; Tmb ≤ 136 °C     20 A
ITSM  non-repetitive peak on-state 
 current		  half sine wave; Tj(init) = 25 °C; tp = 10 ms     225 A
 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     248 A
Tj  junction temperature       150 °C
IGT  gate trigger current  VD = 12 V; IT = 0.1 A; Tj = 25 °C     10 mA
IL  latching current  VD = 12 V; IG = 0.1 A; Tj = 25 °C     60 mA
IH  holding current  VD = 12 V; Tj = 25 °C     40 mA
dVD/dt  rate of rise of off-state voltage  VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM);
 exponential waveform; gate open circuit		 400     V/µs
Datasheet
Chemical Content

Chemical Content - TYN20-600TF

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.