TYN30B-800T
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic
package intended for use in applications requiring very high inrush current capability, high thermal
cycling performance and high junction temperature capability (Tj(max) = 150 °C).
Features and Benefits
- AC power control
- High blocking voltage capability
- High thermal cycling performance
- Planar passivated for voltage ruggedness and reliability
- High immunity to false turn-on by dV/dt
- High junction operating temperature capability (Tj(max) = 150 °C)
- Surface mountable package
- Package meets UL94V0 flammability requirement
- Package is RoHS compliant
- IEC 61000-4-4 fast transient
Applications
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
- Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
TYN30B-800T | VDRM | repetitive peak off-state voltage | 800 | V | |||
VRRM | repetitive peak reverse voltage | 800 | V | ||||
IT(AV) | average on-state current | half sine wave; Th ≤ 68 °C | 19 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Th ≤ 68 °C | 30 | A | |||
ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 350 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 385 | A | |||||
Tj | junction temperature | -40 | 150 | °C | |||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 6 | 15 | mA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 80 | mA | |||
IH | holding current | VD = 12 V; Tj = 25 °C | 60 | mA | |||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 500 | V/µs |