Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)
- High junction operating temperature capability (Tj(max) = 150 °C)
- Very high current surge capability
- Planar passivated for voltage ruggedness and reliability
- High turn-on current rise dIT/dt = 200 A/μs
- High noise immunity dVD/dt = 1000 V/μs up to 150 °C
- High thermal cycling performance
- High voltage capability
- Ignition circuits
- Protection circuits e.g. SMPS inrush current
- Motor control circuits and starters
- Voltage regulation
- Solid state relays
- High junction operating temperature capability (Tj(max) = 150 °C)
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| TYN50-800TN | VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 122 °C | 50 | A | |||
| ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 500 | A | |||
| half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 550 | A | |||||
| Tj | junction temperature | -40 | 150 | °C | |||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 5 | 35 | mA | ||
| IH | holding current | VD = 12 V; Tj = 25 °C | 60 | mA | |||
| VT | on-state voltage | IT = 50 A; Tj = 25 °C | 1.70 | V | |||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/µs |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
Chemical Content - TYN50-800TN
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All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
