TYN50-800TN
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)
Features and Benefits
- High junction operating temperature capability (Tj(max) = 150 °C)
- Very high current surge capability
- Planar passivated for voltage ruggedness and reliability
- High turn-on current rise dIT/dt = 200 A/μs
- High noise immunity dVD/dt = 1000 V/μs up to 150 °C
- High thermal cycling performance
- High voltage capability
Applications
- Ignition circuits
- Protection circuits e.g. SMPS inrush current
- Motor control circuits and starters
- Voltage regulation
- Solid state relays
- High junction operating temperature capability (Tj(max) = 150 °C)
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
TYN50-800TN | VDRM | repetitive peak off-state voltage | 800 | V | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 122 °C | 50 | A | |||
ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 500 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 550 | A | |||||
Tj | junction temperature | -40 | 150 | °C | |||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 5 | 35 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 60 | mA | |||
VT | on-state voltage | IT = 50 A; Tj = 25 °C | 1.70 | V | |||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/µs |