TYN50W-1200T
Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance
Features and Benefits
- High junction operating temperature capability (Tj(max) = 150 °C)
- Very high current surge capability
- Planar passivated for voltage ruggedness and reliability
- High thermal cycling performance
- High voltage capability
Applications
- Line rectifying 50/60 Hz
- Softstart AC motor control
- Motor control
- Power converter
- AC power control
- Lighting and temperature control
- Uninterruptible Power Supply (UPS)
- Solid State Relay (SSR)
- Traction battery charging
- Hybrid PV Inverter
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
TYN50W-1200T | VDRM | repetitive peak off-state voltage | 1200 | V | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 131 °C | 79 | A | |||
ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 600 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 660 | A | |||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 80 | mA | |||
IH | holding current | VD = 12 V; Tj = 25 °C | 160 | mA | |||
VT | on-state voltage | IT = 50 A; Tj = 25 °C | 1.40 | V | |||
dVD/dt | rate of rise of off-state voltage | VDM = 804 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 2000 | V/µs |