WB60FV60AL

Ultrafast power diode (Bare die without sawn).

Features and Benefits
  • Fast switching and soft reverse recovery characteristics
  • Low forward voltage drop
  • Low leakage current
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
  • High operating temperature capability (Tj (max) = 175°C)
  • Bare die
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WB60FV60AL VRRM  repetitive peak reverse voltage       600 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     60 A
VF  forward voltage  IF = 60 A; Tj = 150 °C   1.20 1.60 V
trr  reverse recovery time  IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C     55 ns
Datasheet
Chemical Content

Chemical Content - WB60FV60AL

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.