Hyperfast power diode (Bare die).
- Fast switching and soft reverse recovery characteristics
- Low forward voltage drop
- Low leakage current
- Low reverse recovery current
- Reduces switching losses in associated MOSFET or IGBT
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| WB75FC60AL | VRRM | repetitive peak reverse voltage | 600 | V | |||
| IF(AV) | average forward current | δ = 0.5; square-wave pulse | 75 | A | |||
| VF | forward voltage | IF = 75 A; Tj = 150 °C | 2.20 | 2.75 | V | ||
| trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C | 50 | ns |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| WB75FC60AL | Volume production | Standard Marking | WB75FC60ALZ | 9340 732 04006 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| WB75FC60AL | 9340 732 04006 | WB75FC60ALZ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| WB75FC60AL | WB75FC60ALZ | WB75FC60AL |   |
Chemical Content - WB75FC60AL
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