WBxx080SCM120CGAL
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
Features and Benefits
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- Easy to parallel
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- RoHS compliant
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WBxx080SCM120CGAL | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 1200 | V | ||
ID | drain current | VGS = 18 V; Tmb = 25 °C | 45 | A | |||
Ptot | total power dissipation | Tmb = 25 °C | 270 | W | |||
Tj | junction temperature | -55 | 175 | °C | |||
RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 20 A; Tj = 25 °C | 80 | 98 | mΩ | ||
QG(tot) | total gate charge | ID = 20 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C | 59 | nC | |||
QGD | gate-drain charge | 11 | nC | ||||
Qr | recovered charge | ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 108 | nC |