WBxx160SCM120CGAL

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx160SCM120CGAL VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     24 A
Ptot  total power dissipation  Tmb = 25 °C     155 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 10 A; Tj = 25 °C   160  196 mΩ
QG(tot)  total gate charge  ID = 10 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   35   nC
QGD  gate-drain charge   8   nC
Qr  recovered charge  ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   78   nC

Chemical Content -WBxx160SCM120CGAL

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