WBxx1K0SCM170CGAN

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Optimized for fly-back topologies
  • 15V/0V gate-source voltage compatible with fly-back controllers
  • 100% UIS Tested
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx1K0SCM170CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1700 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     7 A
Ptot  total power dissipation  Tmb = 25 °C     79 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 1 A; Tj = 25 °C   1000   mΩ
QG(tot)  total gate charge  ID = 2 A; VDS = 1200 V; VGS = 0 V/18 V; Tj = 25 °C   12   nC
QGD  gate-drain charge   5   nC
Qr  recovered charge  ISD = 1 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   38   nC

Chemical Content -WBxx1K0SCM170CGAN

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