WG25R135W1

WG25R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package. This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

Features and Benefits
  • Reverse Conducting IGBT with Monolithic Body Diode
  • Maximum Junction Temperature 175 °C
  • Low Conduction Losses
  • Positive Temperature efficient for Easy Parallel Operating
  • EMI Improved Design
Applications
  • Microwave ovens
  • Induction heating
  • Resonant converters
  • Soft switching applications
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WG25R135W1 VCE  collector-emitter voltage  Tj ≥ 25 °C     1350 V
IC  collector current  limited by Tj(max); TC = 100 °C     25 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 25 A; Tj = 25 °C   1.85 2.40 V
Datasheet
Chemical Content

 

 

Disclaimer

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