WG40N120MFW1

WG40N120MFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO-247 package. This device is part of the Medium speed series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter

Features and Benefits
  • Maximum junction temperature 175 °C
  • Medium switching speed
  • Positive Temperature efficient for Easy Parallel Operating
  • Very soft, fast recovery anti-parallel diode
  • EMI Improved Design
Applications
  • Solar inverter
  • UPS
  • Welding converters
  • PFC
  • Mid to high switching frequency applications
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WG40N120MFW1 VCE  collector-emitter voltage  Tj ≥ 25 °C     1200 V
IC  collector current  limited by Tj(max); TC = 100 °C     40 A
VCE(sat)  collector-emitter saturation  voltage  VGE = 15 V; IC = 40 A; Tj = 25 °C   1.68 2.5 V
Datasheet
Chemical Content

Chemical Content - WG40N120MFW1

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.