WG40N65DFJ

40A 650V Trench Fieldstop IGBT with anti-parallel diode in TO3PF pacakge. The WeEn WG40N65DFJ uses advanced field stop technology. This device is ideal for Motor Driver and PFC.

Features and Benefits
  • Advanced Trench Fieldstop technology
  • Very soft, fast recovery anti-parallel diode
  • High speed switching
  • EMI Improved Design
Applications
  • Motor driver
  • PFC
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WG40N65DFJ VCE  collector-emitter voltage       650 V
IC  collector current  TC = 25 °C     31 A
IF  diode forward current  TC = 25 °C     25 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 40 A; Tj = 25 °C   1.5 1.95 V
VF  diode forward voltage  VGE = 0 V; IF = 10 A; Tj = 25 °C   1.24   V
VGE(th)  gate-emitter threhold voltage  IC = 1 mA; VCE = VGE 4.2 5.2 6.2 V
Qg  gate charge  VCC = 520 V; IC = 40 A; VGE = 0 to 15 V; Tj = 25 °C   173   nC
Eon  turn-on energy  Tj = 25 °C; VCC = 400 V; IC = 40 A; VGE = 15V / 0V; RG = 10 Ω   1.7   mJ
Eoff  turn-off energy   1   mJ
Qr  reverse recovery charge  Tj = 25 °C; VR = 400 V; IF = 30 A; dIF/dt = 500 A/us   646   nC
Datasheet
Chemical Content

Chemical Content - WG40N65DFJ

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.