WG50N65DHJ

High speed IGBT with anti-parallel diode in TO3PF package

Features and Benefits
  • High speed with low switching losses
  • Fast and soft recovery anti-parallel diode
  • Positive VCE(sat) temperature coefficient
  • Trench gate field-stop technology
  • Halogen Free package and Pb-free lead finish, RoHS compliant
  • Low thermal resistance
Applications
  • Power Factor Correction
  • Welding Converter
  • Industrial Inverter
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WG50N65DHJ VCE  collector-emitter voltage  Tj ≥ 25 °C     650 V
IC  collector current  limited by Tj(max); TC = 100 °C     50 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.65 2 V
Datasheet
Chemical Content

Chemical Content - WG50N65DHJ

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.