WG50N65DHJ1

WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.

Features and Benefits
  • Positive Temperature efficient for Easy Parallel Operating
  • High Current Capability
  • Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
  • EMI Improved Design
Applications
  • Solar Inverter
  • UPS
  • PFC
  • Converters
Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WG50N65DHJ1 VCE  collector-emitter voltage  Tj ≥ 25 °C     650 V
IC  collector current  limited by Tj(max); TC = 100 °C     50 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.25 1.55 V
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WG50N65DHJ1

SOT1293

STANDARD MARKING * HORIZONTAL, RAIL PACKVolume productionStandard MarkingWG50N65DHJ1Q9340 740 40127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG50N65DHJ19340 740 40127WG50N65DHJ1QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG50N65DHJ1WG50N65DHJ1QWG50N65DHJ1Leaded  H

Chemical Content - WG50N65DHJ1

 

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