WG50N65DHJ1

WG50N65DHJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.

Features and Benefits
  • Positive Temperature efficient for Easy Parallel Operating
  • High Current Capability
  • Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
  • EMI Improved Design
Applications
  • Solar Inverter
  • UPS
  • PFC
  • Converters
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WG50N65DHJ1 VCE  collector-emitter voltage  Tj ≥ 25 °C     650 V
IC  collector current  limited by Tj(max); TC = 100 °C     50 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.25 1.55 V
Datasheet
Chemical Content

Chemical Content - WG50N65DHJ1

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.