WG50N65HDJ2
WG50N65HDJ2 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO3PF package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.
Features and Benefits
- Maximum junction temperature 175 °C
- Positive Temperature efficient for easy paralleling
- Very soft, fast recovery anti-parallel diode
- High speed switching
- EMI Improved Design
Applications
- PFC
- Solar converters
- UPS
- Welding Converters
- Mid to high range switching frequency converters
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
WG50N65HDJ2 | VCE | collector-emitter voltage | Tj ≥ 25 °C | 650 | V | ||
IC | collector current | limited by Tj(max); TC = 100 °C | 50 | A | |||
VCE(sat) | collector-emitter saturation voltage | VGE = 15 V; IC = 50 A; Tj = 25 °C | 1.1 | 1.6 | 2.1 | V |