WG60N65MFW1

WG60N65MFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO247 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features and Benefits
  • Maximum junction temperature 175 °C
  • Positive Temperature efficient for easy paralleling
  • Very soft, fast recovery anti-parallel diode
  • Smooth & Optimized switching
  • EMI Improved Design
Applications
  • Motor control
  • PFC
  • UPS
  • Resonant converters
  • Mid to high switching frequency applications
Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WG60N65MFW1 VCE  collector-emitter voltage  Tj ≥ 25 °C     650 V
IC  collector current  limited by Tj(max); TC = 100 °C     60 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 60 A; Tj = 25 °C   1.7 2.1 V
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WG60N65MFW1

TO247

STANDARD MARKING * HORIZONTAL, RAIL PACKVolume productionStandard MarkingWG60N65MFW1Q9340 740 52127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG60N65MFW19340 740 52127WG60N65MFW1QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG60N65MFW1WG60N65MFW1QWG60N65MFW1Leaded  H

Chemical Content - WG60N65MFW1

 

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