WMSC010H12B1P

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and PressFit pin type. Intergrated with NTC temperature sensor

Features and Benefits
  • Half bridge topology
  • PressFit pins technology
  • Low RDSon
  • Low Switching Losses
  • Low Qg and Crss
  • Low Inductive Design
Applications
  • Power inverters
  • AC-DC converters
  • DC-DC converters
  • Active power factor correctors
  • Motor drivers

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WMSC010H12B1P VDS  drain-source voltage       1200 V
ID  drain current  VGS = 18 V; Th = 25 °C     107 A
Tj  junction temperature   -40   150 °C
RDS(on)  drain-source on-state
 resistance		  VGS = 15 V; ID = 100 A; Tj = 25 °C   10   mΩ
 VGS = 18 V; ID = 100 A; Tj = 25 °C   8.3   mΩ
QG(tot)  total gate charge  ID = 100 A; VDS = 800 V; VGS = -4 V/18 V;
 Tj = 25 °C		   402   nC
QGD  gate-drain charge   62   nC
Qr  recovered charge  ISD = 100 A; VGS = -4 V; di/dt = 6500 A/μs;
 VR = 600 V; Tj = 25 °C		   950   nC
Datasheet
Chemical Content

Chemical Content - WMSC010H12B1P

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.