WNC3060D45160W

Hyperfast power diode and Standard reverse recovery power diode in a single TO247 package, intended for use as input rectifier and bypass diode in a PFC application.

Features and Benefits

Hyperfast power diode

  • Low leakage current
  • Low thermal resistance
  • Low reverse recovery
  • High inrush

Standard recovery diode

  • Low forward voltage drop
  • Low leakage current
  • High voltage capability
  • High inrush current capability
Applications
  • Solar inverter
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

Hyperfast Power Diode 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WNC3060D45160W VRRM repetitive peak reverse voltage       600 V
IF(AV) average forward current δ = 0.5; Tmb ≤ 122 °C; square-wave pulse     30 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     270 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     300 A
VF forward voltage IF = 30 A; Tj = 25 °C   2.00 2.75 V
IF = 30 A; Tj = 150 °C   1.38 1.80 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C   18 22 ns
IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C   35 50 ns
IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C   70   ns
IF = 30 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   29   ns

 

Standard Recovery Diode

Type Number Symbol Parameter Conditions Min Typ Max Unit
WNC3060D45160W VRRM repetitive peak reverse voltage       1600 V
IF(AV) average forward current δ = 0.5; Tmb ≤ 121 °C; square-wave pulse     45 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     475 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     523 A
VF forward voltage IF = 45 A; Tj = 25 °C   1.20 1.40 V
IF = 45 A; Tj = 150 °C   1.10 1.30 V

 

Datasheet
Chemical Content

 

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.