WNS30H100CB
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO-263(D2PAK) plastic package.
Features and Benefits
• Trench structure
• High junction temperature up to 150°C
• Low forward conduction voltage
• Negligible switching losses
Applications
• DC to DC converters
• Freewheeling diode
• OR-ing diode
• Switched mode power supply rectifier
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
WNS30H100CB | VRRM | repetitive peak reverse voltage | 100 | V | |||
IF(AV) | average forward current | δ = 0.5 ; Tmb ≤ 134 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 | 15 | A | |||
IO(AV) | average output current | δ = 0.5 ; Tmb ≤ 133 °C; square-wave pulse; both diodes conducting | 30 | A | |||
VF | forward voltage | IF = 5 A; Tj = 25 °C; Fig. 6; per diode | 0.48 | 0.55 | V | ||
IF = 5 A; Tj = 125 °C; Fig. 6; per diode | 0.41 | 0.48 | V | ||||
IF = 10 A; Tj = 25 °C; Fig. 6; per diode | 0.56 | 0.63 | V | ||||
IF = 10 A; Tj = 125 °C; Fig. 6; per diode | 0.53 | 0.6 | V | ||||
IF = 15 A; Tj = 25 °C; Fig. 6; per diode | 0.64 | 0.71 | V | ||||
IF = 15 A; Tj = 125 °C; Fig. 6; per diode | 0.6 | 0.67 | V | ||||
IR | reverse current | VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8; per diode | 50 | μA | |||
VR = 100 V; Tj = 125 °C; Fig. 7; Fig. 8; per diode | 30 | mA |