WNSC2D20650CJ
Dual Silicon Carbide Schottky diodes in a TO3PF plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- Insulated package rated at 2500V RMS
Applications
- Power factor correction
- Telecom / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC2D20650CJ | VRRM | repetitive peak reverse voltage | 650 | V | |||
IO(AV) | average forward current | δ = 0.5 ; square-wave pulse; Th ≤ 51 °C; both diodes conducting | 20 | A | |||
Tj | junction temperature | 175 | °C | ||||
VF | forward voltage | IF = 10 A; Tj = 25 °C; per diode | 1.5 | 1.7 | V | ||
Qr | recovered charge | IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode | 14 | nC |