WNSC2D20650CJ

Dual Silicon Carbide Schottky diodes in a TO3PF plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • Insulated package rated at 2500V RMS
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D20650CJ VRRM repetitive peak reverse voltage       650 V
IO(AV) average forward current δ = 0.5 ; square-wave pulse; Th ≤ 51 °C; both diodes conducting     20 A
Tj junction temperature       175 °C
VF forward voltage IF = 10 A; Tj = 25 °C; per diode   1.5 1.7 V
Qr recovered charge IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode   14   nC

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.