WNSC2M1K0170B7-A

Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • 100% UIS Tested
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
  • AEC-Q101 qualified
Applications
  • Switching mode power supplies
  • HV capacitor discharge
  • AUX power supply unit
  • EV OBC/ MCU/ VCU/ Backup PSU
Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M1K0170B7-A VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1700 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     6 A
Ptot  total power dissipation  Tmb = 25 °C     58 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 1 A; Tj = 25 °C   1000  
QG(tot)  total gate charge  ID = 2 A; VDS = 1200 V; VGS = 0 V/18 V; Tj = 25 °C   12   nC
QGD  gate-drain charge   5   nC
Qr  recovered charge  ISD = 1 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   38   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
            8
Datasheet
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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
             

Chemical Content - WNSC2M1K0170B7-A

 

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