WNSC5D10650Y
Silicon Carbide Schottky diode in a IITO220-2L plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
Applications
- Power factor correction
- Telecom / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC5D10650Y | VRRM | repetitive peak reverse voltage | 650 | V | |||
IF(AV) | average output current | δ = 0.5; square-wave pulse; Th ≤ 84 °C | 10 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 10 A; Tj = 25 °C | 1.45 | 1.70 | V | ||
Qr | reverse charge | IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C | 14.5 | nC |