WNSC6D20650
Silicon Carbide Schottky Diode in 2-lead TO220-2L plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
• New 6th Generation Technology
• Low Forward Voltage Drop
• Low Reverse Leakage Current
• High Forward Surge Capability IFSM
• Reduced Losses in Associated MOSFET
• Reduced EMI
• Reduced Cooling Requirements
• RoHS Compliant
• Low Forward Voltage Drop
• Low Reverse Leakage Current
• High Forward Surge Capability IFSM
• Reduced Losses in Associated MOSFET
• Reduced EMI
• Reduced Cooling Requirements
• RoHS Compliant
Applications
• Power factor correction
• Telecom / Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED / OLED TV
• Motor Drives
• Telecom / Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED / OLED TV
• Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
WNSC6D20650 | VRRM | repetitive peak reverse voltage | 650 | V | |||
IF(AV) | average forward current | δ = 0.5; square-wave pulse; Tmb ≤ 146 °C | 20 | A | |||
Tj | junction temperature | -55 | 175 | °C | |||
VF | forward voltage | IF = 20 A; Tj = 25 °C | 1.26 | 1.4 | V | ||
Qr | reverse charge | IF = 20 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C | 48 | nC |