WSJM65R170B

WSJM65R170B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

Features and Benefits
  • Superior FOM RDS(on) * Qg
  • Extremely low switching loss
  • 100% avalanche tested
Applications
  • Server power
  • LEV charger
  • LED power
  • Adapters
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WSJM65R170 VDS  drain-source voltage       650 V
VGS  gate-source voltage       ±30 V
ID  continuous drain current  Tmb = 25 °C     23 A
Ptot  power dissipation  Tmb = 25 °C     240 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 11 A   156 170 mΩ
QG(tot)  total gate charge  ID = 11 A; VDS = 400 V; VGS = 10 V   38   nC
EOSS  coss stored erergy  VGS = 0 V; VDS = 0 to 400 V   5.1   μJ
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WSJM65R170B

TO263

 STANDARD MARK SMD Volume production Standard Marking WSJM65R170B 9340 739 26118
Datasheet
Chemical Content
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WSJM65R170B 9340 739 26118 WSJM65R170BJ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WSJM65R170B WSJM65R170BJ WSJM65R170B Leaded  H NA   1

Chemical Content - WSJM65R170B

 

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