BUJ302A

High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.

Features and Benefits
  • Fast switching
  • Low thermal resistance
  • Very high voltage capability
  • Very low switching and conduction losses
Applications
  • DC-to-DC converters
  • High frequency electronic lighting ballasts
  • Inverters
  • Motor control systems
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BUJ302A VCESM collector-emitter peak voltage VBE = 0 V     1050 V
IC collector current       4 A
Ptot total power dissipation Tmb ≤ 25 °C     80 W
hFE DC current gain IC = 0.1 A; VCE = 5 V; Tmb = 25 °C 48 66 100  
IC = 0.8 A; VCE = 3 V; Tmb = 25 °C 25 42 50  
tf fall time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 μ; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs     500 ns
Datasheet
Chemical Content

Chemical Content - BUJ302A

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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