BUJD105AD

High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface mountable plastic package.

Features and Benefits
  • Fast switching
  • High voltage capability
  • Integrated anti-parallel E-C diode
  • Surface mountable plastic package
  • Very low switching and conduction losses
Applications
  • DC-to-DC converters
  • Electronic lighting ballasts
  • Inverters
  • Motor control systems
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BUJD105AD VCESM collector-emitter peak voltage VBE = 0 V     700 V
IC collector current DC     8 A
Ptot total power dissipation Tmb ≤ 25 °C     80 W
hFE DC current gain IC = 4 A; VCE = 5 V; Tmb = 25 °C 8 12.5    
IC = 1 mA; VCE = 5 V; Tmb = 25 °C 10 17 34  
IC = 500 mA; VCE = 5 V; Tmb = 25 °C 13 22 36  
tf fall time IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH; Tmb = 25 °C; inductive load   0.02 0.05 µs
IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH; Tmb = 100 °C; inductive load   0.025 0.1 µs
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 ≤; resistive load   0.3 0.5 µs
Datasheet
Chemical Content

Chemical Content - BUJD105AD

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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