BYV32E-300P
Dual ultrafast power diode in a TO220 package.
Features and Benefits
- Ultra low leakage current
- High junction temperature up to 175 °C
- Low on-state loss
- Fast switching
- Soft recovery characteristic minimizes power consuming oscillations
- High reverse surge capability
- High thermal cycling performance
- Low thermal resistance
Applications
- Home appliance power supply
- Secondary rectification
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
BYV32E-300P | VRRM | repetitive peak reverse voltage | 300 | V | |||
IO(AV) | average output current | δ = 0.5 ; Tmb ≤ 157 °C; SQW; both diodes conducting | 20 | A | |||
IFRM | repetitive peak forward current | δ = 0.5 ; tp = 25 µs; Tmb ≤ 159 °C; per diode | 20 | A | |||
IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; SIN; per diode | 220 | A | |||
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode | 242 | A | |||||
VF | forward voltage | IF = 10 A; Tj = 25 °C :per diode | 1.25 | V | |||
IF = 10 A; Tj = 125 °C:per diode | 1 | V | |||||
trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C | 25 | ns |