PHD13005

High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package.

Features and Benefits
  • Fast switching
  • High voltage capability
  • Integrated anti-parallel E-C diode
  • Low thermal resistance
  • Very low switching and conduction losses
Applications
  • Integrated fluorescent lamp ballasts e.g. high power cluster lamps
  • Low Voltage Tungsten Halogen transformers
  • Remote fluorescent lamp ballasts
  • Self Oscillating Power Supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
PHD13005 VCESM collector-emitter peak voltage VBE = 0 V     700 V
IC collector current DC     4 A
Ptot total power dissipation Tmb ≤ 25 °C     75 W
hFE DC current gain IC = 1 A; VCE = 5 V 12 20 40  
IC = 2 A; VCE = 5 V 10 17 28  
tf fall time IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 μ; resistive load   0.3 0.9 µs
IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; inductive load   0.16 0.9 µs
0.1 0.5 µs
Datasheet
Chemical Content

Chemical Content - PHD13005

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.